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PSMN002-25P; psmn002-25b n-channel enhancement mode ?eld-effect transistor rev. 01 22 october 2001 product data 1. description n-channel logic level ?eld-effect power transistor in a plastic package using trenchmos? 1 technology. product availability: PSMN002-25P in sot78 (to-220ab) psmn002-25b in sot404 (d 2 -pak) 2. features n low on-state resistance n fast switching. 3. applications n high frequency computer motherboard dc to dc converters n or-ing applications. 4. pinning information [1] it is not possible to make connection to pin 2 of the sot404 package. 1. trenchmos is a trademark of koninklijke philips electronics n.v. table 1: pinning - sot78 and sot404, simpli?ed outline and symbol pin description simpli?ed outline symbol 1 gate (g) sot78 (to-220ab) sot404 (d 2- pak) 2 drain (d) [1] 3 source (s) mb drain (d) mbk106 12 mb 3 13 2 mbk116 mb s d g mbb076
philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor product data rev. 01 22 october 2001 2 of 13 9397 750 08315 ? koninklijke philips electronics n.v. 2001. all rights reserved. 5. quick reference data 6. limiting values table 2: quick reference data symbol parameter conditions typ max unit v ds drain-source voltage (dc) t j =25to175 c - 25 v i d drain current (dc) t mb =25 c; v gs =5v - 75 a p tot total power dissipation t mb =25 c - 230 w t j junction temperature - 175 c r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j =25 c 2.2 2.6 m w v gs =5v; i d = 25 a; t j =25 c 2.45 2.9 m w table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) t j =25to175 c - 25 v v dgr drain-gate voltage (dc) t j =25to175 c; r gs =20k w- 25 v v gs gate-source voltage (dc) - 15 v v gsm gate-source voltage t p 50 m s; pulsed; duty cycle 25 %; t j 150 c - 20 v i d drain current (dc) t mb =25 c; v gs =5v; figure 2 and 3 - 75 a t mb = 100 c; v gs =5v; figure 2 - 75 a i dm peak drain current t mb =25 c; pulsed; t p 10 m s; figure 3 - 400 a p tot total power dissipation t mb =25 c; figure 1 - 230 w t stg storage temperature - 55 +175 c t j operating junction temperature - 55 +175 c source-drain diode i s source (diode forward) current (dc) t mb =25 c - 75 a i sm peak source (diode forward) current t mb =25 c; pulsed; t p 10 m s - 400 a avalanche ruggedness e as non-repetitive avalanche energy unclamped inductive load; i d =75a;t p = 0.1 ms; v dd =15v; r gs =50 w ; v gs = 5v; starting t j =25 c; - 500 mj i as non-repetitive avalanche current unclamped inductive load; v dd =15v;r gs =50 w ; v gs =5v; starting t j =25 c - 75 a
philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor product data rev. 01 22 october 2001 3 of 13 9397 750 08315 ? koninklijke philips electronics n.v. 2001. all rights reserved. fig 1. normalized total power dissipation as a function of mounting base temperature. fig 2. normalized continuous drain current as a function of mounting base temperature. t mb =25 c; i dm is single pulse. fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa16 0 40 80 120 0 50 100 150 200 t mb ( o c) p der (%) 03af36 0 20 40 60 80 100 120 0 30 60 90 120 150 180 t mb (oc) i der (%) p der p tot p tot 25 c () ----------------------- 100 % = i der i d i d25c () ------------------- 100 % = 03af38 1 10 10 2 10 3 1 10 10 2 v ds (v) i d (a) dc 100 ms 10 ms r dson = v ds / i d 1 ms t p = 10s 100 s t p t p t p t t d =
philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor product data rev. 01 22 october 2001 4 of 13 9397 750 08315 ? koninklijke philips electronics n.v. 2001. all rights reserved. 7. thermal characteristics 7.1 transient thermal impedance table 4: thermal characteristics symbol parameter conditions value unit r th(j-mb) thermal resistance from junction to mounting base figure 4 0.65 k/w r th(j-a) thermal resistance from junction to ambient vertical in still air; sot78 package 60 k/w mounted on a printed circuit board; minimum footprint; sot404 package 50 k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration. 03af37 10 -3 10 -2 10 -1 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 t p (s) z th(j-mb) (k/w) single pulse d = 0.5 0.2 0.1 0.05 0.02 t p t p t p t t d =
philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor product data rev. 01 22 october 2001 5 of 13 9397 750 08315 ? koninklijke philips electronics n.v. 2001. all rights reserved. 8. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 0.25 ma; v gs =0v t j =25 c25 -- v t j = - 55 c22 -- v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; figure 9 t j =25 c 1 1.5 2 v t j = 175 c 0.4 -- v t j = - 55 c -- 2.3 v i dss drain-source leakage current v ds =25v; v gs =0v t j =25 c - 0.02 1 m a t j = 175 c -- 500 m a i gss gate-source leakage current v gs = 15 v; v ds =0v - 10 100 na r dson drain-source on-state resistance v gs =5v; i d =25a; figure 7 and 8 t j =25 c - 2.45 2.9 m w t j = 175 c - 4.7 5.2 m w v gs =10 v; i d =25a; figure 7 and 8 t j =25 c - 2.2 2.6 m w dynamic characteristics q g(tot) total gate charge i d = 75 a; v dd =15v; v gs =5v; figure 13 - 140 - nc q gs gate-source charge - 34 - nc q gd gate-drain (miller) charge - 60 - nc c iss input capacitance v gs =0v; v ds = 25 v; f = 1 mhz; figure 11 - 10400 - pf c oss output capacitance - 2380 - pf c rss reverse transfer capacitance - 1650 - pf t d(on) turn-on delay time v dd =15v; i d = 12 a; v gs =5v; r g =6 w ; resistive load - 53 ns t r turn-on rise time - 175 ns t d(off) turn-off delay time - 355 ns t f turn-off fall time - 285 ns source-drain diode v sd source-drain (diode forward) voltage i s = 25 a; v gs =0v; figure 12 - 0.85 1.2 v
philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor product data rev. 01 22 october 2001 6 of 13 9397 750 08315 ? koninklijke philips electronics n.v. 2001. all rights reserved. t j =25 ct j =25 c and 175 c; v ds >i d x r dson fig 5. output characteristics: drain current as a function of drain-source voltage; typical values. fig 6. transfer characteristics: drain current as a function of gate-source voltage; typical values. t j =25 c fig 7. drain-source on-state resistance as a function of drain current; typical values. fig 8. normalized drain-source on-state resistance factor as a function of junction temperature. 03af39 0 50 100 150 200 250 300 350 400 450 0 0.5 1 1.5 2 2.5 v ds (v) i d (a) 2.4 v 2.6 v t j = 25 oc 15 v v gs = 2.2 v 2.8 v 5 v 10 v 3 v 3.4 v 3.6 v 4 v 3.2 v 03af41 0 10 20 30 40 50 60 70 80 90 100 0123 v gs (v) i d (a) v ds > i d x r dson 175 oc t j = 25 oc 03af40 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0 100 200 300 400 500 i d (a) r dson ( w ) t j = 25 oc 3.4 v 3.6 v 4 v 5 v 10 v v gs = 15 v 2.4 v 2.6 v 2.8 v 3 v 3.2 v 03af18 0 0.4 0.8 1.2 1.6 2 -60 0 60 120 180 t j (oc) a a r dson r dson 25 c () ---------------------------- - =
philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor product data rev. 01 22 october 2001 7 of 13 9397 750 08315 ? koninklijke philips electronics n.v. 2001. all rights reserved. i d = 1 ma; v ds =v gs t j =25 c; v ds =5v fig 9. gate-source threshold voltage as a function of junction temperature. fig 10. sub-threshold drain current as a function of gate-source voltage. v gs =0v;f=1mhz fig 11. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03af46 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j (oc) v gs(th) (v) max min typ 03aa36 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0 0.5 1 1.5 2 2.5 3 v gs (v) i d (a) max typ min 03af44 10 2 10 3 10 4 10 5 10 -1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss
philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor product data rev. 01 22 october 2001 8 of 13 9397 750 08315 ? koninklijke philips electronics n.v. 2001. all rights reserved. t j =25 c and 175 c; v gs =0v i d = 75 a; v dd = 15 v fig 12. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. fig 13. gate-source voltage as a function of gate charge; typical values. 03af43 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 v sd (v) i s (a) t j = 25 oc 175 oc v gs = 0 v 03af45 0 1 2 3 4 5 6 0 50 100 150 q g (nc) v gs (v) v dd = 15 v i d = 75 a t j = 25 oc
philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor product data rev. 01 22 october 2001 9 of 13 9397 750 08315 ? koninklijke philips electronics n.v. 2001. all rights reserved. 9. package outline fig 14. sot78 (to-220ab). references outline version european projection issue date iec jedec eiaj sot78 sc-46 3-lead to-220ab d d 1 q p l 123 l 1 (1) b 1 e e b 0 5 10 mm scale plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab sot78 dimensions (mm are the original dimensions) a e a 1 c note 1. terminals in this zone are not tinned. q l 2 unit a 1 b 1 d 1 e p mm 2.54 qq a b d c l 2 max. 3.0 3.8 3.6 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 15.8 15.2 0.9 0.7 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 l 1 (1) e l 00-09-07 01-02-16 mounting base
philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor product data rev. 01 22 october 2001 10 of 13 9397 750 08315 ? koninklijke philips electronics n.v. 2001. all rights reserved. fig 15. sot404 (d 2- pak) unit a references outline version european projection issue date iec jedec eiaj mm a 1 d 1 d max. e el p h d q c 2.54 2.60 2.20 15.80 14.80 2.90 2.10 11 1.60 1.20 10.30 9.70 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 b dimensions (mm are the original dimensions) sot404 0 2.5 5 mm scale plastic single-ended surface mounted package (philips version of d 2 -pak); 3 leads (one lead cropped) sot404 e e e b d 1 h d d q l p c a 1 a 13 2 mounting base 99-06-25 01-02-12
philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor product data rev. 01 22 october 2001 11 of 13 9397 750 08315 ? koninklijke philips electronics n.v. 2001. all rights reserved. 10. revision history table 6: revision history rev date cpcn description 01 20011022 product data; initial version
9397 750 08315 philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor ? koninklijke philips electronics n.v. 2001. all rights reserved. product data rev. 01 22 october 2001 12 of 13 9397 750 08315 philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor ? koninklijke philips electronics n.v. 2001. all rights reserved. product data rev. 01 22 october 2001 12 of 13 contact information for additional information, please visit http://www.semiconductors.philips.com . for sales of?ce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com . fax: +31 40 27 24825 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. data sheet status [1] product status [2] de?nition objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be publish ed at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change noti?cation (cpcn) procedure snw-sq-650a.
? koninklijke philips electronics n.v. 2001. printed in the netherlands all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 22 october 2001 document order number: 9397 750 08315 contents philips semiconductors psmn002-25 series n-channel enhancement mode ?eld-effect transistor 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 5 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 6 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7.1 transient thermal impedance . . . . . . . . . . . . . . 4 8 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 12 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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